On the donor states in double InxGa1-xN/InyGa1-yN/GaN staggered quantum wells
Identifieur interne : 000810 ( Main/Repository ); précédent : 000809; suivant : 000811On the donor states in double InxGa1-xN/InyGa1-yN/GaN staggered quantum wells
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Abstract
We have calculated the binding energies of the donor states, Is and 2p±, with respect to the lowest sub-band energy in a double quantum well composed of wurtzite InGaN staggered quantum wells with GaN barriers. All the energies and the wavefunctions were calculated by applying the variational methods. We have found that the binding energies of donors placed in the right quantum well are larger and independent of the middle barrier width of up to 40 Å. This is because of the strong built-in electric field which brings more confinement to the donor wavefunctions in the right staggered quantum well. The binding energies are found to be strong functions of the donor position in the double quantum well system which is the consequence of the large asymmetry introduced by the built-in electric field.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">On the donor states in double In<sub>x</sub>Ga<sub>1-x</sub>N/In<sub>y</sub>Ga<sub>1-y</sub>N/GaN staggered quantum wells</title><author><name sortKey="Yildirim, Hasan" uniqKey="Yildirim H">Hasan Yildirim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Faculty of Science, Karabuk University</s1><s2>Karabuk 78050</s2><s3>TUR</s3><sZ>1 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>Karabuk 78050</wicri:noRegion></affiliation></author><author><name sortKey="Aslan, Bulent" uniqKey="Aslan B">Bulent Aslan</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Faculty of Science, Anadolu University Yunus Emre Campus</s1><s2>Eski<ov type="dot" pos="below">s</ov>ehir 26470</s2><s3>TUR</s3><sZ>2 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>Department of Physics, Faculty of Science, Anadolu University Yunus Emre Campus</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0028052</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 14-0028052 INIST</idno><idno type="RBID">Pascal:14-0028052</idno><idno type="wicri:Area/Main/Corpus">000241</idno><idno type="wicri:Area/Main/Repository">000810</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Asymmetry</term><term>Binding energy</term><term>Donor center</term><term>Doping</term><term>Energy-level transitions</term><term>Gallium nitride</term><term>H-like ions</term><term>Impurity states</term><term>Indium nitride</term><term>Multiple quantum well</term><term>Subband</term><term>Variational methods</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Energie liaison</term><term>Sous bande</term><term>Etat impureté</term><term>Transition niveau énergie</term><term>Méthode variationnelle</term><term>Centre donneur</term><term>Asymétrie</term><term>Dopage</term><term>Nitrure d'indium</term><term>Ion hydrogénoïde</term><term>Nitrure de gallium</term><term>Puits quantique multiple</term><term>InxGa1-xN</term><term>GaN</term><term>InGaN</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have calculated the binding energies of the donor states, Is and 2p±, with respect to the lowest sub-band energy in a double quantum well composed of wurtzite InGaN staggered quantum wells with GaN barriers. All the energies and the wavefunctions were calculated by applying the variational methods. We have found that the binding energies of donors placed in the right quantum well are larger and independent of the middle barrier width of up to 40 Å. This is because of the strong built-in electric field which brings more confinement to the donor wavefunctions in the right staggered quantum well. The binding energies are found to be strong functions of the donor position in the double quantum well system which is the consequence of the large asymmetry introduced by the built-in electric field.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>28</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>On the donor states in double In<sub>x</sub>Ga<sub>1-x</sub>N/In<sub>y</sub>Ga<sub>1-y</sub>N/GaN staggered quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>YILDIRIM (Hasan)</s1></fA11><fA11 i1="02" i2="1"><s1>ASLAN (Bulent)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Faculty of Science, Karabuk University</s1><s2>Karabuk 78050</s2><s3>TUR</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, Faculty of Science, Anadolu University Yunus Emre Campus</s1><s2>Eski<ov type="dot" pos="below">s</ov>ehir 26470</s2><s3>TUR</s3><sZ>2 aut.</sZ></fA14><fA20><s2>115006.1-115006.5</s2></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000501071440060</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>41 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0028052</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We have calculated the binding energies of the donor states, Is and 2p±, with respect to the lowest sub-band energy in a double quantum well composed of wurtzite InGaN staggered quantum wells with GaN barriers. All the energies and the wavefunctions were calculated by applying the variational methods. We have found that the binding energies of donors placed in the right quantum well are larger and independent of the middle barrier width of up to 40 Å. This is because of the strong built-in electric field which brings more confinement to the donor wavefunctions in the right staggered quantum well. 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